Methods for forming laterally crystallized polysilicon and...

Details Methods for forming laterally crystallized polysilicon and... Methods for forming laterally crystallized polysilicon and...

2005-05-31

2005-05-31

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S488000

Reexamination Certificate

active

06900082

ABSTRACT:
The present invention provides a method for forming metal-induced laterally crystallized polysilicon in which the metal residue is reduced. A first low temperature lateral crystallization is performed using a metal crystallization-inducing agent such as nickel or a nickel compound. A second lateral crystallization is then carried out which may be either a low-temperature crystallization using metal residue from the first crystallization as the metal crystallization-inducing agent, or may be a high temperature crystallization that does not require a metal.

REFERENCES:
patent: 5879974 (1999-03-01), Yamazaki
patent: 5937282 (1999-08-01), Nakajima et al.
patent: 5940693 (1999-08-01), Maekawa
patent: 6077731 (2000-06-01), Yamazaki et al.
patent: 6228693 (2001-05-01), Mackawa et al.
patent: 6558986 (2003-05-01), Choi
patent: 6692996 (2004-02-01), Lee et al.

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