Methods for forming interconnect structures

Details Methods for forming interconnect structures Methods for forming interconnect structures

2005-07-12

2008-08-12

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S624000, C438S629000, C438S637000, C257SE21576, C257SE21579

Reexamination Certificate

active

07410895

ABSTRACT:
A method for forming an interconnect structure. A substrate is provided with a low-k dielectric layer thereon. At least one conductive feature is then formed in the low-k dielectric layer. A cap layer is formed overlying the low-k dielectric layer, and the conductive feature and the low-k dielectric layer is then subjected to an energy source to reduce a dielectric constant thereof.

REFERENCES:
patent: 6475929 (2002-11-01), Gabriel et al.
patent: 6713382 (2004-03-01), Pangrle et al.
patent: 2006/0189133 (2006-08-01), Dimitrakopoulos et al.

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