Methods for forming integrated circuit capacitors including dual

Details Methods for forming integrated circuit capacitors including dual Methods for forming integrated circuit capacitors including dual

1997-06-02

1999-06-29

Brown, Peter Toby

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

438250, H01L 2120

Patent

active

059181354

ABSTRACT:
A method for forming an integrated circuit device includes the steps of forming a first capacitor electrode on a substrate and forming a first wiring electrode on the substrate. An insulating layer is formed on the first capacitor electrode and on the first wiring electrode opposite the substrate. A second capacitor electrode is formed on a portion of the insulating layer opposite the first capacitor electrode. A contact hole is formed in the insulating layer exposing a portion of the first wiring electrode. A second wiring electrode is then formed on the exposed portion of the wiring electrode, after forming the second capacitor electrode. Related structures are also discussed.

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