Methods for forming integrated circuit capacitor electrodes incl

Details Methods for forming integrated circuit capacitor electrodes incl Methods for forming integrated circuit capacitor electrodes incl

1997-05-28

1999-05-11

Utech, Benjamin

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438397, 438253, 438254, 438703, 438720, 438723, 438754, 438756, H01L21/70;21/8242;21/306

Patent

active

059021268

ABSTRACT:
A method for forming an electrode for an integrated circuit device includes the steps of forming a first insulating layer on a semiconductor substrate and forming a conductive mesa on the first insulating layer. The insulating layer has a contact hole therein exposing a portion of the substrate, and the conductive mesa covers and extends into the contact hole so that the conductive mesa is electrically connected to the substrate. A second insulating layer is formed on the first insulating layer wherein the second insulating layer surrounds the conductive mesa and wherein the second insulating layer has a second thickness greater than the first thickness. Accordingly, sidewalls of the second insulating layer are exposed adjacent the conductive mesa. Spacers are formed on the conductive mesa along the sidewalls of the second insulating layer, and the conductive mesa is etched using the second insulating layer and the spacers as an etching mask.

REFERENCES:
patent: 5330614 (1994-07-01), Ahn
patent: 5508223 (1996-04-01), Tseng
patent: 5510289 (1996-04-01), Choi

Affiliated with

Also associated with

Rating

Methods for forming integrated circuit capacitor electrodes incl does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for forming integrated circuit capacitor electrodes incl, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming integrated circuit capacitor electrodes incl will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-242381