Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-12
2010-02-23
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C257SE21597, C257SE23011
Reexamination Certificate
active
07666788
ABSTRACT:
A method for forming conductive vias in a substrate of a semiconductor device component includes forming one or more holes, or apertures or cavities, in the substrate so as to extend only partially through the substrate. A barrier layer, such as an insulative layer, may be formed on surfaces of each hole. Surfaces within each hole may be coated with a seed layer, which facilitates adhesion of conductive material within each hole. Conductive material is introduced into each hole. Introduction of the conductive material may be effected by deposition or plating. Alternatively, conductive material in the form of solder may be introduced into each hole.
REFERENCES:
patent: 2820752 (1958-01-01), Heller
patent: 3577324 (1971-05-01), Patterson
patent: 4179800 (1979-12-01), Takaba et al.
patent: 4211603 (1980-07-01), Reed
patent: 4312897 (1982-01-01), Reimann
patent: 4325780 (1982-04-01), Schulz, Sr.
patent: 4487654 (1984-12-01), Coppin
patent: 4525246 (1985-06-01), Needham
patent: 4605471 (1986-08-01), Mitchell
patent: 4692349 (1987-09-01), Georgiou et al.
patent: 4720324 (1988-01-01), Hayward
patent: 4808273 (1989-02-01), Hua et al.
patent: 4830264 (1989-05-01), Bitaillou et al.
patent: 4954313 (1990-09-01), Lynch
patent: 4978639 (1990-12-01), Hua et al.
patent: 5160579 (1992-11-01), Larson
patent: 5168624 (1992-12-01), Shirai
patent: 5218761 (1993-06-01), Maniwa et al.
patent: 5224265 (1993-07-01), Dux et al.
patent: 5228966 (1993-07-01), Murata
patent: 5245751 (1993-09-01), Locke et al.
patent: 5262718 (1993-11-01), Svendsen et al.
patent: 5285352 (1994-02-01), Pastore et al.
patent: 5309632 (1994-05-01), Takahashi et al.
patent: 5374788 (1994-12-01), Endoh
patent: 5421083 (1995-06-01), Suppelsa et al.
patent: 5424245 (1995-06-01), Gurtler et al.
patent: 5536908 (1996-07-01), Etchells et al.
patent: 5674787 (1997-10-01), Zhao et al.
patent: 5682062 (1997-10-01), Gaul
patent: 5689091 (1997-11-01), Hamzehdoost et al.
patent: 5853559 (1998-12-01), Tamaki et al.
patent: 5876580 (1999-03-01), Lykins, II
patent: 5897368 (1999-04-01), Cole, Jr. et al.
patent: 6027995 (2000-02-01), Chiang et al.
patent: 6032527 (2000-03-01), Genova et al.
patent: 6114768 (2000-09-01), Gaul et al.
patent: 6169024 (2001-01-01), Hussein
patent: 6197664 (2001-03-01), Lee et al.
patent: 6228754 (2001-05-01), Iacoponi et al.
patent: 6235624 (2001-05-01), Sasaki et al.
patent: 6242935 (2001-06-01), Akram
patent: 6255126 (2001-07-01), Mathieu et al.
patent: 6277412 (2001-08-01), Otterbeck
patent: 6277669 (2001-08-01), Kung et al.
patent: 6291332 (2001-09-01), Yu et al.
patent: 6384481 (2002-05-01), Hussein et al.
patent: 6406939 (2002-06-01), Lin
patent: 6418616 (2002-07-01), Bhatt et al.
patent: 6444576 (2002-09-01), Kong
patent: 6448644 (2002-09-01), Lin
patent: 6468889 (2002-10-01), Iacoponi et al.
patent: 6479382 (2002-11-01), Naem
patent: 6497800 (2002-12-01), Talieh et al.
patent: 6498381 (2002-12-01), Halahan et al.
patent: 6529022 (2003-03-01), Pierce
patent: 6562709 (2003-05-01), Lin
patent: 6565729 (2003-05-01), Chen et al.
patent: 6565730 (2003-05-01), Chakravorty et al.
patent: 6607938 (2003-08-01), Kwon et al.
patent: 6620731 (2003-09-01), Farnworth et al.
patent: 6670269 (2003-12-01), Mashino
patent: 6711812 (2004-03-01), Lu et al.
patent: 6743499 (2004-06-01), Suemasu et al.
patent: 6768205 (2004-07-01), Taniguchi et al.
patent: 6852627 (2005-02-01), Sinha
patent: 6863794 (2005-03-01), Tsai et al.
patent: 6908845 (2005-06-01), Swan et al.
patent: 6963483 (2005-11-01), Chakravorty et al.
patent: 7007378 (2006-03-01), Gaudiello et al.
patent: 7108776 (2006-09-01), Sakaki
patent: 2002/0115290 (2002-08-01), Halahan et al.
patent: 2003/0168342 (2003-09-01), Chakravorty et al.
patent: 2004/0173454 (2004-09-01), Olgado et al.
patent: 2004/0178495 (2004-09-01), Yean et al.
patent: 0 907 206 (1999-04-01), None
patent: 11-251316 (1999-09-01), None
International Search Report, dated Apr. 12, 2005, 7 pages.
Written Opinion of the International Searching Authority, dated Apr. 12, 2005, 9 pages.
Lindsay, Jr. Walter L
Micro)n Technology, Inc.
TraskBritt
LandOfFree
Methods for forming conductive vias in semiconductor device... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for forming conductive vias in semiconductor device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming conductive vias in semiconductor device... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4191685