Methods for forming capacitors including rapid thermal oxidation

Details Methods for forming capacitors including rapid thermal oxidation Methods for forming capacitors including rapid thermal oxidation

1997-06-13

1999-08-17

Utech, Benjamin

Coating processes

Electrical product produced

Condenser or capacitor

4271263, 4273761, 4273762, 4274193, B05P 512

Patent

active

059391316

ABSTRACT:
A method for forming a microelectronic capacitor includes the steps of forming a first conductive layer on a substrate and forming an oxide reducing layer on the first conductive layer opposite the substrate wherein the oxide reducing layer reduces oxidation of the first conductive layer. An oxide layer is formed on the oxide reducing layer opposite the substrate, and a dielectric layer is formed on the oxide layer opposite the substrate wherein the dielectric layer has a dielectric constant that is higher than a dielectric constant of the oxide reducing layer, and higher than a dielectric constant of the oxide layer. In addition, a second conductive layer is formed on the dielectric layer opposite the substrate. Related structures are also discussed.

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