Methods for forming capacitors and contact holes of...

Details Methods for forming capacitors and contact holes of... Methods for forming capacitors and contact holes of...

2006-12-26

2006-12-26

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S253000, C438S637000, C257S306000, C257SE21176

Reexamination Certificate

active

07153752

ABSTRACT:
A method for forming a capacitor and a contact hole of a semiconductor device substantially simultaneously is disclosed. According to one example, a metal layer and a TiN layer are deposited in sequence on a substrate and, then, etched through a pattern to form a capacitor part and a contact hole part on the substrate. A insulating layer and an ILD layer are formed in sequence over the substrate including the capacitor part and the contact hole part. Through etching processes using photoresist patterns as masks, openings are formed in the capacitor part and the contact hole part. The openings are filed with tungsten to form tungsten plugs. As disclosed herein, device defects may be reduced using a damascene process to fabricate a semiconductor device with simple structure by using a tungsten plug as an upper metal layer of a capacitor.

REFERENCES:
patent: 5874355 (1999-02-01), Huang et al.
patent: 5882999 (1999-03-01), Anderson et al.
patent: 5918135 (1999-06-01), Lee et al.
patent: 6117747 (2000-09-01), Shao et al.
patent: 6166423 (2000-12-01), Gambino et al.
patent: 6200629 (2001-03-01), Sun
patent: 6259128 (2001-07-01), Adler et al.
patent: 6329234 (2001-12-01), Ma et al.
patent: 6346454 (2002-02-01), Sung et al.
patent: 6387775 (2002-05-01), Jang et al.
patent: 6803306 (2004-10-01), Tsau
patent: 2002/0086492 (2002-07-01), Tsau

Affiliated with

Also associated with

Rating

Methods for forming capacitors and contact holes of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for forming capacitors and contact holes of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming capacitors and contact holes of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3687292