Methods for forming an enriched metal oxide surface for use...

Details Methods for forming an enriched metal oxide surface for use... Methods for forming an enriched metal oxide surface for use...

2007-01-23

2007-01-23

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S687000, C438S622000, C438S669000, C438S720000, C438S754000, C257SE21300, C257SE21310, C257SE21582

Reexamination Certificate

active

10929173

ABSTRACT:
Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state for use in a semiconductor device are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state for use in a semiconductor device is also provided.

REFERENCES:
patent: 5468445 (1995-11-01), Casey et al.
patent: 6143657 (2000-11-01), Liu et al.
patent: 6261953 (2001-07-01), Uozumi
patent: 6380083 (2002-04-01), Gross
patent: 6417112 (2002-07-01), Peyne et al.
patent: 6602653 (2003-08-01), Geusic et al.
patent: 2005/0048794 (2005-03-01), Brask et al.

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