Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-06-07
2011-06-07
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S096000, C438S097000, C438S485000, C438S488000, C257SE21009, C257SE21133, C257SE21411, C257SE21413, C257SE25007, C257SE29083, C257SE29293, C257SE29294, C257SE31047, C257SE31048
Reexamination Certificate
active
07955890
ABSTRACT:
Embodiments of the present invention relate to methods for depositing an amorphous film that may be suitable for using in a NIP photodiode in display applications. In one embodiment, the method includes providing a substrate into a deposition chamber, supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber, maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber, and forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor.
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Chen Jriyan Jerry
Choi Soo Young
Won Tae Kyung
Yim Dong-Kil
Applied Materials Inc.
Lebentritt Michael S
Patterson & Sheridan L.L.P.
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