Methods for forming all tungsten contacts and lines

Details Methods for forming all tungsten contacts and lines Methods for forming all tungsten contacts and lines

2007-12-21

2011-11-08

Pert, Evan (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S653000, C438S654000, C438S643000, C438S648000, C438S656000, C257S486000, C257S751000, C257S763000, C257SE21168, C257SE21592, C257SE21476

Reexamination Certificate

active

08053365

ABSTRACT:
Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.

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