Methods for forming a titanium nitride layer

Details Methods for forming a titanium nitride layer Methods for forming a titanium nitride layer

2008-03-18

2010-12-07

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

C257SE21169

Reexamination Certificate

active

07846824

ABSTRACT:
Methods for forming titanium nitride layers are provided herein. In some embodiments, a method of forming a titanium nitride layer on a substrate may include providing a substrate into a processing chamber having a target comprising titanium disposed therein; supplying a nitrogen-containing gas into the processing chamber; sputtering a titanium source material from the target in the presence of a plasma formed from the nitrogen-containing gas to deposit a titanium nitride layer on the substrate; and upon depositing the titanium nitride layer to a desired thickness, forming a magnetic field that biases ions in the processing chamber away from the substrate.

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International Search Report and Written Opinion mailed Oct. 26, 2009 for PCT Application No. PCT/US2009/037525.

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