Methods for forming a ruthenium-based film on a substrate

Details Methods for forming a ruthenium-based film on a substrate Methods for forming a ruthenium-based film on a substrate

2011-03-15

2011-03-15

Meeks, Timothy H (Department: 1715)

Coating processes

Coating by vapor, gas, or smoke

C427S250000

Reexamination Certificate

active

07906175

ABSTRACT:
Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.

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