Methods for forming a ruthenium-based film on a substrate

Coating processes – Coating by vapor – gas – or smoke

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S250000

Reexamination Certificate

active

07906175

ABSTRACT:
Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.

REFERENCES:
patent: 5248496 (1993-09-01), Schuster et al.
patent: 5358889 (1994-10-01), Emesh et al.
patent: 5378492 (1995-01-01), Mashiko et al.
patent: 5496582 (1996-03-01), Mizutani et al.
patent: 6036741 (2000-03-01), Shindo et al.
patent: 6063705 (2000-05-01), Vaartstra
patent: 6143192 (2000-11-01), Westmoreland
patent: 6281125 (2001-08-01), Vaartstra et al.
patent: 6303809 (2001-10-01), Chi et al.
patent: 6458183 (2002-10-01), Phillips et al.
patent: 6479100 (2002-11-01), Jin et al.
patent: 6537461 (2003-03-01), Nakahara et al.
patent: 6541067 (2003-04-01), Marsh et al.
patent: 6580111 (2003-06-01), Kim et al.
patent: 6605735 (2003-08-01), Kawano et al.
patent: 6610873 (2003-08-01), Saito
patent: 6737313 (2004-05-01), Marsh et al.
patent: 6824824 (2004-11-01), Saito
patent: 6844261 (2005-01-01), Marsh et al.
patent: 7002033 (2006-02-01), Sakai et al.
patent: 7316962 (2008-01-01), Govindarajan
patent: 7544389 (2009-06-01), Dussarrat et al.
patent: 2002/0004293 (2002-01-01), Soininen et al.
patent: 2002/0173054 (2002-11-01), Kim
patent: 2003/0036242 (2003-02-01), Yang
patent: 2003/0037802 (2003-02-01), Nakahara et al.
patent: 2003/0073294 (2003-04-01), Marsh
patent: 2004/0241321 (2004-12-01), Ganguli et al.
patent: 2006/0162658 (2006-07-01), Weidman
patent: 2007/0160756 (2007-07-01), Treichel
patent: 2008/0121249 (2008-05-01), Gatineau et al.
patent: 2008/0214003 (2008-09-01), Xia et al.
patent: 1 717 343 (2006-11-01), None
patent: 57 206210 (1984-06-01), None
patent: 60 087855 (1985-05-01), None
patent: 63 287549 (1988-11-01), None
patent: 06 009223 (1994-01-01), None
patent: 2000 083929 (2000-03-01), None
patent: 2001 284317 (2001-10-01), None
patent: 2003 027240 (2003-01-01), None
patent: WO 00 15865 (2000-03-01), None
patent: WO 2004 046417 (2004-06-01), None
patent: WO 2005 020317 (2005-03-01), None
patent: WO 2006 035281 (2006-04-01), None
patent: WO 2006035281 (2006-04-01), None
patent: WO 2008 088563 (2008-07-01), None
International Search Report for PCT/IB2008/050637.
IPRP for PCT/IB2008/050637.
Burkey et al. “Encapsulated Alkaline-Earth Metallocenes. 2. Triisopropylcyclopentadienyl systems, [(C3H7)3C5H2]2Ae(THF)n(Ae=Ca, Sr, Ba; n=0-2), and the crystal structure of [(C3H7)3C5H2]2Ba(THF)2”, Organometallics, vol. 12, No. 4, 1993, pp. 1331-1337.
Frohlich et al. “Preparation of SrRuO3 Films for Advanced CMOS Metal Gates”, Material Science in Semiconductor Processing 7 (2004) pp. 265-269.
Hatanpaa et al. “Synthesis and Characterisation of Cyclopentadienyl Complexes of Barium: Precursors for Atomic Layer Deposition of BaTiO3”, Dalton Transactions, Mar. 8, 2004, pp. 1181-1188.
Igarashi et al. “Absorption Behaviour of Gaseous Ruthenium into Water”, Radiochimica Acta, 57, 51-55, 1992.
Jelenkovic et al. “Degradation of RuO2 Thin Films in Hydrogen Atmosphere at Temperatures Between 150 and 250° C.”, The Institution of Electrical Engineers, Stevenage, Great Britain, Jan. 2003.
Kang et al. “Metal-Organic CVD of a (Ba,Sr)RuO3 Oxide Electrode Using a Single Cocktail Source”, Chemical Vapor Deposition, vol. 11, No. 1, Jan. 1, 2005, pp. 17-20.
Kang et al. “Deposition and characterization of Ru thin films prepared by metallorganic chemical vapor deposition”, J. Korean Phys. Soc., 2000, vol. 37, No. 6, pp. 1040-1044.
Kepak et al. “Removal of RuO4vapors on natural clinoptilolite”, J. Radioanalytical and Nucl. Chem., vol. 159, No. 2, pp. 317-334, 1992.
Kepak et al. “Sorption of106RuO4vapours on molecular sieve Zeolon 500”, lsotopenpraxis, 21(2), S.58 bis 62, 1985.
Kepak et al. “Sorption of106RuO4vapours on natural and synthetic molecular sieves”, lsotopenpraxis, 26(2), pp. 73-78, 1990.
Kukli et al. “Atomic Layer Deposition of Calcium Oxide and Calcium Hafnium Oxide Film Using Calcium Cyclopentadienyl Precursors”, Thin Solid Films, vol. 500, No. 1-2, Apr. 3, 2006, pp. 322-323.
Lai et al. “Synthesis and characterization of ruthenium complexes with two fluorinated amino alkoxide chelates. The quest to design suitable MOCVD source reagents”, Chemistry of Materials American Chem. Soc. USA, vol. 15, No. 12, Jun. 17, 2003, pp. 2454-2462.
Lee et al. “Chemical vapor deposition of RuO2 thin films using the liquid precursor Ru(OD)3”, Electrochemical and Solid-State Letters, 1999, vol. 2, pp. 622-623.
Maas et al. “Confinement of Ruthenium Oxides Volatized During Nuclear Fuels Reprocessing”, Nucl. Technol., 1979.
McMurray et al. “Uniform Collois dof Ruthenium Dioxide Hydrate Evolved by the Surface-Catalyzed Reduction of Ruthenium Tetroxide”, J. Phys. Chem., 1993, 97, 8039-8045.
Park et al. “Metallorganic chemical vapor deposition of Ru and RuO2 using ruthenocene precursor and oxygen gas”, J. Electrochemical Soc., 2000, vol. 147, pp. 203-209.
Sankar et al. “Low Temperature Chemical Vapour Deposition of Ruthenium and Ruthenium Dioxide on Polymer Surfaces”, J. Mater. Chem., 1999, 9, pp. 2439-2444.
Shibutani et al. “A Novel Ruthenium Precursor for MOCVD without Seed Ruthenium Layer”, Tosch R&D Review, 47, 2003.
Sodergard et al. “An Integrated Multiple Media News Portal”, Electrochemical Society Proceedings, vol. 2003-08, pp. 231-247.
Vehkamaki et al. “Atomic Layer Deposition of BaTiO3 Thin Films—Effect of Barium Hydroxide Formation”, Chemical Vapor Deposition, vol. 13, No. 5, May 1, 2007, pp. 239-246.
Vujisic et al. “Adsorption of Gaseous RuO4 by Various Solvents”, 17thDOE Nuclear Air Cleaning Conf.
Yuan et al. “Low-temperature chemical vapor deposition of ruthenium dioxide from ruthenium tetroxide: A simple approach to high-purity RuO2films”, Chemistry of Materials, American Chemical Society, Washington, US, vol. 5, No. 7, Jul. 1993, pp. 908-910.
International Search Report and Written Opinion for related PCT/IB2004/004131 mailed May 4, 2005.
International Search Report and Written Opinion for related PCT/IB2005/000835 mailed Jun. 16, 2005.
International Search Report and Written Opinion for related PCT/IB2005/002833 mailed Jan. 18, 2006.
International Search Report and Written Opinion for related PCT/IB2008/051324 mailed Sep. 3, 2008.
International Search Report and Written Opinion for related PCT/IB2009/051276 mailed Jul. 6, 2009.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods for forming a ruthenium-based film on a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for forming a ruthenium-based film on a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming a ruthenium-based film on a substrate will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2675098

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.