Methods for forming a P-type polysilicon layer in a...

Details Methods for forming a P-type polysilicon layer in a... Methods for forming a P-type polysilicon layer in a...

2005-12-01

2009-02-03

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S558000, C438S142000, C257S327000, C257SE29241, C257SE21106, C257SE21134

Reexamination Certificate

active

07485555

ABSTRACT:
A P-type polysilicon layer having a stable and desired resistivity is formed by alternately depositing a plurality of silicon atom layers and a plurality of group IIIA element atom layers on a semiconductor substrate by atomic layer deposition, and thereafter forming a P-type polysilicon layer by thermally diffusing the plurality of group IIIA element atom layers into the plurality of silicon atom layers. The plurality of group IIIA element atom layers may comprise Al, Ga, In, and/or Tl.

REFERENCES:
patent: 6555451 (2003-04-01), Kub et al.
patent: 6716751 (2004-04-01), Todd
patent: 6746934 (2004-06-01), Sandhu et al.

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