Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-05-17
2009-11-03
Do, Thuan (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C716S030000, C365S063000, C365S066000, C365S067000
Reexamination Certificate
active
07614027
ABSTRACT:
The present subject matter allows non-orthogonal lines to be formed at the same thickness as the orthogonal lines so as to promote compact designs, to be formed with even line edges, and to be formed efficiently. Various method embodiments relate to forming a magnetic random access memory (MRAM) array. Various embodiments include forming a first wiring layer of approximately parallel conductors, a second wiring layer of approximately parallel conductors and a third wiring layer of approximately parallel conductors such that the first, second and third wiring layers cross at a number of intersections. At least one of the first, second and third wiring layers are formed so as to be non-orthogonal with respect to a remaining at least one of the first, second and third wiring layers. The method further includes forming a layer of magnetic storage elements proximately located to the intersections. Other aspects are provided herein.
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Do Thuan
Doan Nghia M
Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
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