Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-04
2005-10-04
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S680000, C438S688000, C204S192170
Reexamination Certificate
active
06951814
ABSTRACT:
Methods of forming a metal wiring layer on an integrated circuit include forming an insulating pattern including a recess region on an integrated circuit substrate. A metal layer is formed in the recess region and on a top surface of the insulting pattern. The metal layer is removed from the top surface of the insulating pattern adjacent the recess region and from an upper portion of the recess region. An aluminum film is formed on the metal layer at a process temperature less than a reflow temperature of the metal layer to substantially fill the upper portion of the recess region after removing the metal layer. A metal film is formed on the aluminum film at a process temperature less than the reflow temperature of the etched metal layer.
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Notice to Submit Response for corresponding Korean Application No. 10-2002-0071387 dated Jul. 15, 2004 (English Translation).
Choi Gil-heyun
Kim Byung-hee
Seo Jung-hun
Yun Ju-young
Fourson George
Myers Bigel & Sibley & Sajovec
Pham Thanh V.
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