Methods for forming a charge coupled devices including buried tr

Details Methods for forming a charge coupled devices including buried tr Methods for forming a charge coupled devices including buried tr

1999-07-14

2000-10-24

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

438 57, 438 60, 438 75, 257222, 257223, 257232, H01L 2100, H01L 27148

Patent

active

061366293

ABSTRACT:
A charge coupled device includes a substrate, a photoelectric conversion region, a hole accumulation region, a vertical charge coupled region, and a buried transmission gate region. The substrate includes a surface with a light receiving region and a charge transmission region. The photoelectric conversion region is provided in a substrate beneath the light receiving and charge transmission regions, and the photoelectric conversion region generates a photoelectric signal responsive to light received at the light receiving region of the substrate surface. The hole accumulation region is provided in the substrate between the photoelectric conversion region and the light receiving region of the substrate surface. The vertical charge coupled region is provided in the substrate between the photoelectric conversion region and the charge transmission region of the substrate surface. The buried transmission gate region is provided between the vertical charge coupled region and the photoelectric conversion region. The buried transmission gate region transfers the photoelectric signal from the photoelectric conversion region to a portion of the vertical charge coupled region opposite the substrate surface. Related methods are also disclosed.

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