Methods for filling trenches in a semiconductor wafer

Details Methods for filling trenches in a semiconductor wafer Methods for filling trenches in a semiconductor wafer

1997-07-30

1999-06-22

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438695, 438714, 438788, 20419223, H01L 21316

Patent

active

059151900

ABSTRACT:
A method for filling a trench in a semiconductor wafer that is disposed in a plasma-enhanced chemical vapor deposition chamber. The method includes the step of depositing a protection layer of silicon dioxide over the wafer and into the trench while the wafer is biased at a first RF bias level. The protection layer has a thickness that is insufficient to completely fill the trench. Further, there is provided the step of forming a trench-fill layer of silicon dioxide over the protection layer and into the trench while the wafer is biased at a second RF bias level that is higher than the first bias level.

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