Methods for fabricating vertical channel buried grid field contr

Details Methods for fabricating vertical channel buried grid field contr Methods for fabricating vertical channel buried grid field contr

1981-11-23

1984-08-21

Saba, W. G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29578, 29580, 148175, 156647, 156653, 156657, 357 22, 357 23, 357 56, 357 89, H01L 2120, H01L 2174

Patent

active

044661738

ABSTRACT:
Methods for fabricating vertical channel buried grid field controlled devices with improved performance characteristics include methods which avoid the problems caused by autodoping effects. In one form of the invention, one surface of a semiconductor substrate is preferentially etched to form substantially vertically-walled grooves, and the grooves are selectively refilled employing vapor phase epitaxial growth to form a grid structure. A semiconductor layer is then epitaxially grown over the substrate surface and grid so as to bury the grid. In another form of the invention, grooves are preferentially etched in semiconductor substrate to achieve steep vertical walls. Thereafter, the grooves are either partially refilled by means of epitaxial growth or, preferably, completely refilled and then again preferentially etched to remove a predetermined fraction of the refilling. A second epitaxial refill is done to fill the remainder of the grooves. While autodoping can occur during this second epitaxial refill, the autodoping only extends the grid region upwards by a few microns, and cannot cause shorting between the grids.

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