Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-04
2011-01-04
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000, C257S621000, C257SE21585
Reexamination Certificate
active
07863189
ABSTRACT:
Methods are provided for fabricating silicon carriers with conductive through-vias that allow high-yield manufacture of silicon carrier with low defect density. In particular, methods are provided which enable fabrication of silicon carries with via diameters such as 1 to 10 microns in diameter for a vertical thickness of less than 10 micrometers to greater than 300 micrometers, which are capable robust to thermal-mechanical stresses during production to significantly minimize the thermal mechanical movement at the via sidewall interface between the silicon, insulator, liner and conductor materials.
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Basker Veeraraghaven S.
Cotte John Michael
Deligianni Hariklia
Knickerbocker John Ulrich
Kwietniak Keith T.
Coleman W. David
Enad Christine
International Business Machines - Corporation
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