Methods for fabricating semiconductor devices and contacts...

Details Methods for fabricating semiconductor devices and contacts... Methods for fabricating semiconductor devices and contacts...

2005-09-14

2008-12-09

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S586000, C438S587000, C438S279000, C257SE29300, C257SE21680, C257SE21422, C257SE21179

Reexamination Certificate

active

07462903

ABSTRACT:
Methods for fabricating semiconductor structures and contacts to semiconductor structures are provided. A method comprises providing a substrate and forming a gate stack on the substrate. The gate stack is formed having a first axis. An impurity doped region is formed within the substrate adjacent to the gate stack and a dielectric layer is deposited overlying the impurity doped region. A via is etched through the dielectric layer to the impurity doped region. The via has a major axis and a minor axis that is perpendicular to and shorter than the major axis. The via is etched such that the major axis is disposed at an angle greater than zero and no greater than 90 degrees from the first axis. A conductive contact is formed within the via.

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