Methods for fabricating semiconductor devices

Details Methods for fabricating semiconductor devices Methods for fabricating semiconductor devices

2007-06-18

2009-12-22

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S392000, C257S401000, C257S408000, C257S499000, C438S696000, C438S257000, C438S266000, C438S596000

Reexamination Certificate

active

07635898

ABSTRACT:
Semiconductor devices and methods for fabricating a semiconductor devices are disclosed. A disclosed method comprises: forming a first gate electrode functioning as a flash memory; forming first spacers on sidewalls of the first gate electrode; forming a second gate electrode functioning as a normal gate electrode; forming a source/drain region with a shallow junction by performing a first ion implantation process using at least one of the first spacers as a mask; forming second spacers on a sidewall of the first spacer and on sidewalls of the second gate electrode; forming a source/drain region with a deep junction by performing a second ion implantation process using the second spacers as a mask.

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