Methods for fabricating semiconductor devices

Details Methods for fabricating semiconductor devices Methods for fabricating semiconductor devices

2007-08-21

2007-08-21

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S257000, C438S266000, C438S289000, C438S296000, C438S593000, C438S595000, C438S596000

Reexamination Certificate

active

10747599

ABSTRACT:
Semiconductor devices and methods for fabricating a semiconductor devices are disclosed. A disclosed method comprises: forming a first gate electrode functioning as a flash memory; forming first spacers on sidewalls of the first gate electrode; forming a second gate electrode functioning as a normal gate electrode; forming a source/drain region with a shallow junction by performing a first ion implantation process using at least one of the first spacers as a mask; forming second spacers on a sidewall of the first spacer and on sidewalls of the second gate electrode; forming a source/drain region with a deep junction by performing a second ion implantation process using the second spacers as a mask.

REFERENCES:
patent: 5674768 (1997-10-01), Chang et al.
patent: 6969655 (2005-11-01), Kim

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