Methods for fabricating semiconductor devices

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S329000

Reexamination Certificate

active

07371507

ABSTRACT:
Methods for fabricating semiconductor devices are disclosed. A disclosed method comprises: forming a conductive layer, depositing a interlayer dielectric layer, forming an anti-reflective coating layer on the interlayer dielectric layer, forming a photoresist pattern on the anti-reflection layer, dry-etching the anti-reflective coating layer and the interlayer dielectric layer using the photoresist pattern as a mask and performing an Ar and fluoric plasma treatment to remove a residual layer deposited during the etching of the ARC layer and the ILD.

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patent: 10-2003-0002119 (2003-01-01), None

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