Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-10-17
2009-12-08
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C117S008000, C257S066000, C257S075000, C257SE21413, C438S455000, C438S456000, C438S486000, C438S487000, C438S977000
Reexamination Certificate
active
07629209
ABSTRACT:
A method for fabricating polysilicon film is disclosed. First, a first substrate is provided, wherein a plurality of sunken patterns has been formed on the front surface of the first substrate. Then, a second substrate is provided and an amorphous polysilicon film is formed on the second substrate. Next, the amorphous polysilicon film formed on the second substrate is in contact with the front surface of the first substrate. The amorphous polysilicon film is transferred into a polysilicon film by performing an annealing process. Then, the first substrate and the second substrate are separated from each other. This method reduces the cost and the time for fabricating polysilicon film.
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Hou Chih-Yuan
Hu Guo-Ren
Liu Po-Chih
Wu YewChung Sermon
Chunghwa Picture Tubes Ltd.
Jianq Chyun IP Office
Wilczewski M.
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