Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2010-06-23
2011-12-20
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S023000, C438S479000, C257SE21190, C977S762000
Reexamination Certificate
active
08080468
ABSTRACT:
Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches.
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Henry Michael D.
Homyk Andrew P.
Scherer Axel
Walavalkar Sameer
California Institute of Technology
Ghyka Alexander
Nikmanesh Seahvosh
Steinfl & Bruno LLP
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