Methods for fabricating nanoscale electrodes and uses thereof

Details Methods for fabricating nanoscale electrodes and uses thereof Methods for fabricating nanoscale electrodes and uses thereof

2006-06-16

2010-11-16

Such, Matthew W (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S584000, C977S890000, C257SE21036

Reexamination Certificate

active

07833904

ABSTRACT:
The present invention relates to methods for fabricating nanoscale electrodes separated by a nanogap, wherein the gap size may be controlled with high precision using a self-aligning aluminum oxide mask, such that the gap width depends upon the thickness of the aluminum oxide mask. The invention also provides methods for using the nanoscale electrodes.

REFERENCES:
patent: 4242374 (1980-12-01), Sansregret
patent: 4979466 (1990-12-01), Nishitani et al.
patent: 5079178 (1992-01-01), Chouan et al.
patent: 5140391 (1992-08-01), Hayashi et al.
patent: 5168077 (1992-12-01), Ashizawa et al.
patent: 5306666 (1994-04-01), Izumi
patent: 5320728 (1994-06-01), Tepman et al.
patent: 6099655 (2000-08-01), Farr et al.
patent: 6103320 (2000-08-01), Matsumoto et al.
patent: 6137107 (2000-10-01), Hanson et al.
patent: 6271130 (2001-08-01), Rajh et al.
patent: 6274014 (2001-08-01), Matsumoto et al.
patent: 6362499 (2002-03-01), Moise et al.
patent: 6400976 (2002-06-01), Champeau
patent: 6541375 (2003-04-01), Hayashi et al.
patent: 6759180 (2004-07-01), Lee
patent: 6881604 (2005-04-01), Lindstrom et al.
patent: 6887523 (2005-05-01), Zhuang et al.
patent: 6897009 (2005-05-01), Johnson, Jr. et al.
patent: 6929983 (2005-08-01), Busta et al.
patent: 2002/0106447 (2002-08-01), Lindstrom et al.
patent: 2002/0168810 (2002-11-01), Jackson
patent: 2003/0021967 (2003-01-01), Sagiv et al.
patent: 2003/0156359 (2003-08-01), Takahashi et al.
patent: 2003/0185981 (2003-10-01), Min et al.
patent: 2003/0230481 (2003-12-01), Miley
patent: 2004/0000667 (2004-01-01), Baniecki et al.
patent: 2004/0127025 (2004-07-01), Crocker, Jr. et al.
patent: 2004/0131843 (2004-07-01), Mirkin et al.
patent: 2004/0175631 (2004-09-01), Crocker et al.
patent: 2004/0227097 (2004-11-01), Brabec et al.
patent: 2004/0248381 (2004-12-01), Myrick
patent: 2005/0057136 (2005-03-01), Moriya et al.
patent: 2005/0112860 (2005-05-01), Park et al.
patent: 2005/0168113 (2005-08-01), Hirai et al.
patent: 2005/0191434 (2005-09-01), Mirkin et al.
patent: 2005/0202668 (2005-09-01), McCarty
patent: 2006/0008969 (2006-01-01), Takahashi et al.
patent: 2006/0154400 (2006-07-01), Choi et al.
patent: 2006/0278879 (2006-12-01), Busta
patent: 2008/0149479 (2008-06-01), Olofsson et al.
patent: 06053206 (1994-02-01), None
patent: 2003052665 (2003-06-01), None
Manago, T. and Akinaga, H. “Spin-Polarized Light-Emitting Diode Using Metal/Insulator/Semiconductor Structures.” Appl. Phys. Lett., vol. 81, No. 4 (Jul. 22, 2002): pp. 694-696.
Machine Translation of JP06053206A.
Machine Translation of KR2003052665A.
Manago, T. and Akinaga, H. “Spin-Polarized Light-Emitting Diode Using Metal/Insulator/Semiconductor Structures.” Appl. Phys. Lett., vol. 81, No. 4 (Jul. 22, 2002): pp. 694-696.
“Insulating Materials”, Techlib.com, [online]. [retrieved Sep. 9, 2005]. Retrieved from the Internet: <URL: http://techlib.com/reference/insulation.html>, (2005), 4 pgs.
“Semiconductors: Silicon: Metallization: Metal Deposition”,U.S. Department of Labor—OSHA, [online], [retrieved Sep. 7, 2005]. Retrieved from the Internet: <URL: http://www.osha.gov/SLTC/semiconductors/metallization/metaldeposition.html>, (2005), 2 pgs.
Cho, Y.-K., et al., “Sub-Lithographic Patterning Technology for Nanowire Model Catalysts and DNA Label-Free Hybridization Detection”,Proceedings of SPIE, vol. 5220—Nanofabrication Technologies, (2003), 10-19.
Cho, Y.-K., et al., “Sublithographic Nanofabrication Technology for Nanocatalysts and DNA Chips”,J. Vac. Sci. Technol. B21(6), (2003), 2951-2955.
Fursina, A., et al., “Nanogaps With Very Large Aspect Ratios for Electrical Measurements”,Applied Physics Letters, 92, (2008), 113102-1-113102-3.
Lannoo, M., “1.9 Nanotechnology and Semiconducting Materials”,European White Book on Fundamental Research in Materials, [online]. [archived May 16, 2006]. Retrieved from the Internet: <URL: http://web.archive.org/web/20060516021435/ http://www.mpg.de/pdf/europeanWhiteBook/wb—materials—063—066.pdf>, (2006), 4 pgs.
Martin, J. I., et al., “Ordered Magnetic Nanostructures: Fabrication and Properties”,Journal of Magnetism and Magnetic Materials, 256 (2003), 449-501.
Tang, J., et al., “Chemically Responsive Molecular Transistors Fabricated by Self-Aligned Lithography and Chemical and Chemical Self-Assembly”,Journal of Vacuum Science&Technology B, 24(6), (2006), 3227-3229.
Tang, J., et al., “Encoding Molecular-Wire Formation within Nanoscale Sockets”,Angew. Chem. Int. Ed., 46, (2007), 3892-3995.
Tang, J., et al., “Single-Molecule Transistor Fabrication by Self-Aligned Lithography and in situ Molecular Assembly”,Microelectronic Engineering, 83, (2006), 1706-1709.

Affiliated with

Also associated with

Rating

Methods for fabricating nanoscale electrodes and uses thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for fabricating nanoscale electrodes and uses thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for fabricating nanoscale electrodes and uses thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4239148