Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2011-08-30
2011-08-30
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S053000
Reexamination Certificate
active
08008105
ABSTRACT:
A method for fabricating a micro-electro-mechanical device (such as a cMUT) is disclosed. The method combines a substrate, a middle spring layer and a top plate using wafer bonding technology or sacrificial technology. A cavity is formed on either the top of the substrate or the bottom of the middle spring layer. A connector is formed on either the top of the middle spring layer or the bottom of the top plate. Upon joining the three layers, the connector defines a transducing space between the top plate and the middle spring layer. The connector is horizontally distanced from the sidewall to define a cantilever anchored at the sidewall. The cantilever and the cavity allow a vertical displacement of the connector, which transports the top wafer in a piston-like motion to change the transducing space. Multiple device elements can be made on the same substrate.
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Brewster William M.
Kolo Technologies, Inc.
Lee & Hayes PLLC
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