Methods for fabricating integrated circuit devices including etc

Details Methods for fabricating integrated circuit devices including etc Methods for fabricating integrated circuit devices including etc

1998-01-05

2000-08-15

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257905, 438634, 438740, 438970, H01L 27108

Patent

active

061040509

ABSTRACT:
An integrated circuit device includes a substrate, an insulating layer on the substrate, and a plurality of parallel conductive lines on the insulating layer. An etch barrier is on each of the parallel conductive lines wherein each of the etch barriers comprises a layer of silicon nitride on a respective conductive line and wherein each of the etch barriers further comprises a layer of silicon on the silicon nitride layer. In addition, the device includes a plurality of conductive vias through the insulating layer providing electrical connection to respective surface portions of the substrate, wherein each of the conductive vias is provided in the insulating layer between the etch barriers.

REFERENCES:
patent: 5275972 (1994-01-01), Ogawa et al.
patent: 5292684 (1994-03-01), Chung et al.
patent: 5391895 (1995-02-01), Dreifus
patent: 5429991 (1995-07-01), Iwasaki et al.
patent: 5565372 (1996-10-01), Kim
patent: 5567989 (1996-10-01), Sim
patent: 5578847 (1996-11-01), Aoki et al.
patent: 5589413 (1996-12-01), Sung et al.
patent: 5604365 (1997-02-01), Kajigaya et al.
patent: 5795810 (1998-08-01), Houston
patent: 5893728 (1999-04-01), Hidaka

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