Methods for fabricating fluid injection devices

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

Reexamination Certificate

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Details

C257SE21474

Reexamination Certificate

active

07439163

ABSTRACT:
Methods for fabricating fluid injection devices. A patterned sacrificial layer is formed on a substrate. A patterned first structural layer is formed on the substrate covering the sacrificial layer. At least one fluid actuator is formed on the structural layer. A first passivation layer is formed on the first structural covering the at least one fluid actuator. An under bump metal (UBM) layer is conformably formed on the first passivation layer. A patterned first photoresist is formed at a predetermined nozzle site and a contact opening site exposes the UBM layer. A second structural layer is formed on the UBM layer. An etching protective layer is formed on the second structural layer. The first photoresist is removed creating an opening at the nozzle site exposing the UBM layer. The UBM layer in the opening is removed.

REFERENCES:
patent: 6102530 (2000-08-01), Kim et al.

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