Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2006-02-17
2008-10-21
Le, Thao X. (Department: 2892)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C257SE21474
Reexamination Certificate
active
07439163
ABSTRACT:
Methods for fabricating fluid injection devices. A patterned sacrificial layer is formed on a substrate. A patterned first structural layer is formed on the substrate covering the sacrificial layer. At least one fluid actuator is formed on the structural layer. A first passivation layer is formed on the first structural covering the at least one fluid actuator. An under bump metal (UBM) layer is conformably formed on the first passivation layer. A patterned first photoresist is formed at a predetermined nozzle site and a contact opening site exposes the UBM layer. A second structural layer is formed on the UBM layer. An etching protective layer is formed on the second structural layer. The first photoresist is removed creating an opening at the nozzle site exposing the UBM layer. The UBM layer in the opening is removed.
REFERENCES:
patent: 6102530 (2000-08-01), Kim et al.
Chen Wei-Lin
Hsu Tsung-Ping
Hu Hung-Sheng
Shyn Der-Rong
Benq Corporation
Le Thao X.
Muncy Geissler Olds & Lowe, PLLC
Qisda Corporation
Ullah Elias
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