Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-04-05
2011-04-05
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S674000, C438S687000
Reexamination Certificate
active
07919408
ABSTRACT:
A method for fabricating fine line and space routing described. The method includes providing a substrate having a dielectric layer and a seed layer disposed thereon. An anti-reflective coating layer and a photo-resist layer are then formed above the seed layer. The photo-resist layer and the anti-reflective coating layer are patterned to form a patterned photo-resist layer and a patterned anti-reflective coating layer, to expose a first portion of the seed layer, and to leave covered a second portion of the seed layer. A metal layer is then formed on the first portion of the seed layer, between features of the patterned photo-resist layer and the patterned anti-reflective coating layer. The patterned photo-resist layer and the patterned anti-reflective coating layer are subsequently removed. Then, the second portion of the seed layer is removed to provide a series of metal lines above the dielectric layer.
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Hlad Mark S.
Li Sheng
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Picardat Kevin M
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