Methods for fabricating electrode structures including oxygen an

Details Methods for fabricating electrode structures including oxygen an Methods for fabricating electrode structures including oxygen an

1997-02-25

1998-07-14

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427535, 427 81, 4272557, 427404, H05H 100, B05D 306

Patent

active

057801150

ABSTRACT:
A method for fabricating an integrated circuit capacitor includes the steps of forming a first electrode on a microelectronic substrate, and plasma treating the first electrode with a with a plasma of a gas including nitrogen and oxygen. A dielectric film is formed on the plasma treated first electrode opposite the microelectronic substrate. A second electrode is formed on the dielectric film opposite the plasma treated first electrode.

REFERENCES:
patent: 5508221 (1996-04-01), Kamiyama

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