Methods for fabricating bulk FinFET devices having deep...

Details Methods for fabricating bulk FinFET devices having deep... Methods for fabricating bulk FinFET devices having deep...

2009-08-20

2011-10-18

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S212000, C438S283000, C257SE21630, C257SE21632, C257SE21643

Reexamination Certificate

active

08039326

ABSTRACT:
Methods are provided for fabricating Bulk FinFET devices having deep trench isolation. One or more deep isolation trenches are formed in a bulk silicon wafer. Mandrel-forming material is deposited overlying the bulk silicon wafer and dielectric pad layer thereon and simultaneously into the trench(es) as filler material. Mandrels are formed, overetching thereof creating a recess at the trench upper end. A conformal sidewall spacer material from which sidewall spacers are fabricated is deposited overlying the mandrels and into the recess forming a spacer overlying the filler material in the trench(es). Mandrels are removed using the spacer as an etch stop. Fin structures are formed from the bulk silicon wafer using the sidewall spacers as an etch mask. The mandrel-forming material is amorphous and/or polycrystalline silicon.

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