Methods for fabricating an interlayer dielectric layer of a...

Details Methods for fabricating an interlayer dielectric layer of a... Methods for fabricating an interlayer dielectric layer of a...

2007-04-03

2007-04-03

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S631000, C438S778000, C257S760000, C257SE21276

Reexamination Certificate

active

10964307

ABSTRACT:
Methods for fabricating an interlayer dielectric layer of a semiconductor device are disclosed. An illustrated method comprises forming a metallic interconnect on a substrate; depositing an SRO layer on the metallic interconnect while the substrate is located in a chamber; and forming an FSG layer on the SRO layer without removing the substrate from the chamber.

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