Methods for fabricating a wafer structure having a strained...

Details Methods for fabricating a wafer structure having a strained... Methods for fabricating a wafer structure having a strained...

2005-03-14

2008-12-16

Smith, Zandra (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S455000

Reexamination Certificate

active

07465646

ABSTRACT:
Methods for fabricating a wafer structure having a strained silicon utility layer are described. In an embodiment, the method includes providing a prototype wafer having at least a support substrate and a strained silicon model layer upon the support substrate, and then providing a relaxed silicon-germanium layer on the strained silicon model layer. Next, a strained silicon utility layer is provided on the relaxed silicon-germanium layer to form an intermediate structure. The strained silicon utility layer has substantially the same characteristics as the strained silicon model layer. The method also includes detaching the strained silicon utility layer from the intermediate structure at a predetermined zone of weakness in the relaxed silicon-germanium layer to form a wafer structure having a strained silicon utility layer.

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