Methods for fabricating a triple-gate MOSFET transistor

Details Methods for fabricating a triple-gate MOSFET transistor Methods for fabricating a triple-gate MOSFET transistor

2005-08-09

2005-08-09

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S287000, C257S331000, C257S320000

Reexamination Certificate

active

06927106

ABSTRACT:
Fabrication methods are presented in which a semiconductor body is deposited in a cavity of a temporary form structure above a semiconductor starting structure. The formed semiconductor body can be epitaxial silicon deposited in the form cavity over a silicon substrate, and includes three body portions, two of which are doped to form source/drains, and the other forming a transistor channel that overlies the starting structure. A gate structure is formed along one or more sides of the channel body portion to create a MOS transistor.

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