Methods for fabricating a stressed MOS device

Details Methods for fabricating a stressed MOS device Methods for fabricating a stressed MOS device

2011-03-08

2011-03-08

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S181000, C438S300000, C438S308000, C438S938000, C257S018000, C257S019000, C257SE21093, C257SE21182, C257SE21207

Reexamination Certificate

active

07902008

ABSTRACT:
A method for fabricating a stressed MOS device in and on a semiconductor substrate is provided. The method comprises the steps of forming a gate electrode overlying the semiconductor substrate and etching a first trench and a second trench in the semiconductor substrate, the first trench and the second trench formed in alignment with the gate electrode. A stress inducing material is selectively grown in the first trench and in the second trench and conductivity determining impurity ions are implanted into the stress inducing material to form a source region in the first trench and a drain region in the second trench. To preserve the stress induced in the substrate, a layer of mechanically hard material is deposited on the stress inducing material after the step of ion implanting.

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