Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-12-05
2006-12-05
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S063000, C257S296000, C438S003000
Reexamination Certificate
active
07145798
ABSTRACT:
An MRAM device comprising an array of MRAM elements, with each element having an MRAM bit influenced by a magnetic field from a current flowing through a conductor, also includes a magnetic keeper formed adjacent the conductor to advantageously alter the magnetic field. The magnetic keeper alters the magnetic field by concentrating the field within the keeper thereby reducing the extent in which fringe field exists, thus allowing the MRAM elements to be formed closer to increase the areal density of the MRAM device. Increase in magnetic field flux due to the magnetic keeper allows operation of the MRAM device with lowered power. Soft magnetic materials such as nickel iron, nickel iron cobalt, or cobalt iron may be used to form the magnetic keeper.
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Berg Lonny
Hurst Alan
Jenson Mark
Vavra William
Witcraft William F.
Knobbe Martens Olson & Bear LLP
Le Toan
Micro)n Technology, Inc.
Phung Anh
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