Methods for fabricating a germanium on insulator wafer

Details Methods for fabricating a germanium on insulator wafer Methods for fabricating a germanium on insulator wafer

2007-06-12

2007-06-12

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C438S478000, C257SE23001

Reexamination Certificate

active

11029808

ABSTRACT:
Improved fabrication processes for manufacturing GeOI type wafers are disclosed. In an implementation, a method for fabricating a germanium on insulator wafer includes providing a source substrate having a surface, at least a layer of germanium and a weakened area. The weakened area is located at a predetermined depth in the germanium layer of the source substrate and is generally parallel to the source substrate surface. The technique also includes providing a germanium oxynitride layer in or on the source substrate, bonding the source substrate surface to a handle substrate to form a source-handle structure, and detaching the source substrate from the source-handle structure at the weakened area of the source substrate to create the germanium on insulator wafer having, as a surface, a useful layer of germanium.

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