Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-06-20
1999-11-23
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438613, H01L 2144
Patent
active
059899913
ABSTRACT:
An insulating layer having an irregular upper surface is provided to improve the adhesion and increase the coefficient of friction between the insulating layer and a bonding pad formed over the insulating layer. By making the upper surface of the insulating layer irregular, the area of contact between the bonding pad and the insulating layer is increased. As a result, the adhesion between the bonding pad and the insulating layer is also increased. This prevents the bonding pad from being detached from the insulating layer when a bonding wire is later attached to the bonding pad. The upper surface of the insulating layer can be made irregular by etching one or more cavities in the upper surface of the insulating layer. The upper surface of the insulating layer can alternatively be made irregular by forming one or more raised structures beneath the insulating layer. The raised structures cause plateaus to be formed at the upper surface of the insulating layer.
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Collins Deven
Integrated Device Technology Inc.
Picardat Kevin M.
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