Methods for etching borophosphosilicate glass

Details Methods for etching borophosphosilicate glass Methods for etching borophosphosilicate glass

1996-06-26

1999-05-18

Nuzzolillo, Maria

Etching a substrate: processes

Gas phase etching of substrate

Etching a multiple layered substrate where the etching...

438743, 438738, 438740, C03C15/00

Patent

active

059048620

ABSTRACT:
A method in a plasma processing chamber for etching through a selected portion of a borophosphosilicate glass (BPSG) layer of a wafer layer stack. The method includes the step of introducing an etchant source gas into the plasma processing chamber, which consists essentially of CO, CHF.sub.3, and C.sub.4 F.sub.8. The method further includes the step of striking a plasma in the plasma processing chamber from the etchant source gas. Additionally, there is included the step of etching at least partially through the BPSG layer with the plasma.

REFERENCES:
patent: 5556501 (1996-09-01), Collins et al.
patent: 5589413 (1996-12-01), Sung et al.
patent: 5611888 (1997-03-01), Bosch et al.
patent: 5626716 (1997-05-01), Bosch et al.

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