Methods for enhancing the formation of nickel mono-silicide...

Details Methods for enhancing the formation of nickel mono-silicide... Methods for enhancing the formation of nickel mono-silicide...

2007-08-07

2007-08-07

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S301000, C257S272000

Reexamination Certificate

active

11075140

ABSTRACT:
Methods for reducing stress in silicon to enhance the formation of nickel mono-silicide films formed thereon include a strain compensation source/drain implant process, a silicide formation process on an amorphous silicon layer, a strain compensating buried layer process, a strain compensating dielectric capping layer process during silicide formation, a two cycle anneal process during silicide formation, an excess nickel process to transform NiSi2to NiSi.

REFERENCES:
patent: 4137103 (1979-01-01), Mader et al.
patent: 6380057 (2002-04-01), Buynoski et al.
patent: 7098094 (2006-08-01), Lu
patent: 7119404 (2006-10-01), Chang et al.

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