Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-08-01
2006-08-01
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S189090, C365S145000
Reexamination Certificate
active
07085150
ABSTRACT:
The present invention facilitates data retention lifetimes for ferroelectric devices by improving switched polarization of ferroelectric memory cells. A ferroelectric memory device comprising ferroelectric memory cells is provided (702). A duration for applying a DC bias to the ferroelectric memory cells is selected (704) according to at least a desired switched polarization improvement. A magnitude for applying the DC bias to the ferroelectric memory cells is also selected (706) according to at least the desired switched polarization improvement. Further, an elevated temperature is selected for applying the DC bias to the ferroelectric memory cells is also selected (708) according to at least the desired switched polarization improvement. Subsequently, the DC bias is applied to the ferroelectric memory cells (710), which activates one or more inactive domains within the ferroelectric memory cells and increases initial polarization values.
REFERENCES:
patent: 5661730 (1997-08-01), Mitra et al.
patent: 5969935 (1999-10-01), Kammerdiner et al.
patent: 6008659 (1999-12-01), Traynor
patent: 6238933 (2001-05-01), Sun et al.
patent: 6529398 (2003-03-01), Nair et al.
patent: 6541375 (2003-04-01), Hayashi et al.
“Influence of the Crystallization Thermal Treatment on the Structural and Electrical Properties of PZT Thin Films”, Antonio Leondino Bacichetti Junior, Manuel Henrique Lente, Ricardfo Goncalves Mendes, Pedro Iris Paulin Filho, and Jose Antonio Eiras, Materials Research, vol. 7, No. 2, 2004, pp. 363-367.
“Polarization as a Driving Force in Accelerated Retention Measurements on Ferroelectric Thin Films”, S. D. Traynor, IEEE., 1998, pp. 15-18.
“Fatigue and Retention Reliability of Low Voltage PZT Ferroelectic Films”, J. Rodriguez, S. Aggarwal, S. Martin, S. Summerfelt, K.R. Udayakumar, T. Moise, R. Bailey, F. CHU, S. Sun, G. Fox and T. Davenport, Abstract/Conference presentation, Mar. 2003, 2 pgs.
Rodriguez John A.
Udayakumar Kezhakkedath R.
Brady III Wade James
Garner Jacqueline J.
Lam David
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
Methods for enhancing performance of ferroelectic memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for enhancing performance of ferroelectic memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for enhancing performance of ferroelectic memory... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3659823