Methods for determining resistance of phase change memory...

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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C365S189150

Reexamination Certificate

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07961538

ABSTRACT:
Methods for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.

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