Methods for determining impurity distributions in microelectroni

Details Methods for determining impurity distributions in microelectroni Methods for determining impurity distributions in microelectroni

1997-09-19

1998-12-22

Snay, Jeffrey

Chemistry: analytical and immunological testing

Process or composition for determination of physical state...

Surface area, porosity, imperfection, or alteration

134 2, 134 3, 134 28, 134 41, 134902, 436 80, 436173, 436175, 436177, 438115, 438906, G01N 1300

Patent

active

058518347

ABSTRACT:
Impurity distributions in microelectronic structures formed from an aluminum-containing material are determined. A passivation layer, e.g., a titanium/titanium nitride layer or a borphosphosilicate glass (BPSG) layer, is formed on a substrate. A layer of the aluminum-containing material is formed on the passivation layer. The layer of the aluminum-containing material is then exposed to a phosphoric acid solution to remove aluminum from the layer of the aluminum-containing material and leave a precipitate on the passivation layer. The precipitate is then analyzed using scanning electron microscope (SEM) photomicrograms and/or Auger analysis to determine a distribution of impurities in the layer of the aluminum-containing material.

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