Methods for depth profiling in semiconductors using...

Details Methods for depth profiling in semiconductors using... Methods for depth profiling in semiconductors using...

2011-07-19

2011-07-19

Stafira, Michael P (Department: 2886)

Optics: measuring and testing

Inspection of flaws or impurities

Surface condition

C356S237300

Reexamination Certificate

active

07982867

ABSTRACT:
Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.

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