Methods for depositing polycrystalline films with engineered...

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

Reexamination Certificate

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C427S255700, C427S376100, C427S376200, C438S488000

Reexamination Certificate

active

07005160

ABSTRACT:
Methods for controlling the grain structure of a polycrystalline Si-containing film involve depositing the film in stages so that the morphology of a first film layer deposited in an initial stage favorably influences the morphology of a second film layer deposited in a later stage. In an illustrated embodiment, the initial stage includes an anneal step. In another embodiment, the later stage involves depositing the second layer under different deposition conditions than for the first layer.

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