Methods for depositing metal films onto diffusion barrier...

Details Methods for depositing metal films onto diffusion barrier... Methods for depositing metal films onto diffusion barrier...

2011-07-26

2011-07-26

Chen, Bret (Department: 1715)

Coating processes

Coating by vapor, gas, or smoke

Metal coating

C427S255394, C427S255700, C427S564000, C427S576000, C427S584000, C427S249150, C427S249170, C427S404000, C427S419700

Reexamination Certificate

active

07985449

ABSTRACT:
A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.

REFERENCES:
patent: 4661375 (1987-04-01), Thomas
patent: 5019531 (1991-05-01), Awaya et al.
patent: 5085731 (1992-02-01), Norman et al.
patent: 5094701 (1992-03-01), Norman et al.
patent: 5098516 (1992-03-01), Norman et al.
patent: 5135801 (1992-08-01), Nystrom et al.
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5434044 (1995-07-01), Nulman et al.
patent: 5521120 (1996-05-01), Nulman et al.
patent: 5567987 (1996-10-01), Lee
patent: 5580823 (1996-12-01), Hegde et al.
patent: 5654235 (1997-08-01), Matsumoto et al.
patent: 5665209 (1997-09-01), Byun
patent: 5776830 (1998-07-01), Sumi et al.
patent: 5776831 (1998-07-01), Padmanabhan et al.
patent: 5891513 (1999-04-01), Dubin et al.
patent: 5925225 (1999-07-01), Ngan et al.
patent: 5973402 (1999-10-01), Shinriki et al.
patent: 6114764 (2000-09-01), Hoshino et al.
patent: 6150268 (2000-11-01), Iacoponi et al.
patent: 6165555 (2000-12-01), Jun et al.
patent: 6303490 (2001-10-01), Jeng
patent: 6334249 (2002-01-01), Hsu
patent: 6344411 (2002-02-01), Yamada et al.
patent: 6413864 (2002-07-01), Pyo
patent: 6423201 (2002-07-01), Mandrekar
patent: 6475902 (2002-11-01), Hausmann et al.
patent: 6491978 (2002-12-01), Kalyanam
patent: 6509266 (2003-01-01), Ciotti et al.
patent: 6545357 (2003-04-01), Chopra
patent: 6548402 (2003-04-01), Wang et al.
patent: 6562715 (2003-05-01), Chen et al.
patent: 6743473 (2004-06-01), Parkhe et al.
patent: 6869876 (2005-03-01), Norman et al.
patent: 6955986 (2005-10-01), Li
patent: 7018917 (2006-03-01), Elers
patent: 7524533 (2009-04-01), Garg et al.
patent: 2001/0054769 (2001-12-01), Raaijmakers et al.
patent: 2002/0013487 (2002-01-01), Norman et al.
patent: 2002/0043468 (2002-04-01), Mikkola et al.
patent: 2003/0145790 (2003-08-01), Sakamoto et al.
patent: 2004/0137158 (2004-07-01), Kools et al.
patent: 0 818 559 (1998-01-01), None
patent: 1 029 943 (2000-08-01), None
patent: 1 142 894 (2001-10-01), None
patent: 1 180 553 (2002-02-01), None
patent: 1 180 553 (2002-02-01), None
patent: 96127870 (1996-05-01), None
patent: 2000219968 (2000-08-01), None
patent: WO 99/00830 (1999-01-01), None
patent: WO 00/71550 (2000-11-01), None
Roh, Woo-Cheol, et al., “Diffusion Barrier Characteristics of Hf(C,N) Thin Films Deposited by Plasma Enhanced Metal Organic Chemical Vapor Deposition for Cu Metallization”. Jpn, J. Appl. Phys. vol. 37 (1998) pp. L406-L408.
Rha, Sa-Kyun, et al., “Improved TiN film as a diffusion barrier between copper and silicon”. Thin Solid Films 320 (1998), pp. 134-140.
Becker, Jill S., et al., “Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethlyamido)tungsten and ammonia”. Applied Physics Letters, vol. 82, No. 14, Apr. 7, 2003, pp. 2239-2241.
U.S. Appl. No. 60258471, filed Dec. 20, 1985, Shiotani Yoshimi, Absrtact.
E. T. Eisenbraun, et al., “Enhanced Growth of Device-Quality Copper by Hydrogen Plasma-Assisted Chemical Vapor Deposition,” Appl. Phys. Lett. 60 (25), pp. 3126-3128 (1992).
H. J. Jin, et al., “Plasma-Enhanced Metal Organic Chemical Vapor Deposition of High Purity Copper Thin Films Using Plasma Reactor with the H Atom Source,” J. Vac. Sci. Technol. A 17(3), pp. 726-730 (1999).
S. K. Lakshmanan, et al., “A Novel Model of Hydrogen Plasma Assisted Chemical Vapor Deposition of Copper,” Thin Solid Films 338, pp. 24-39 (1999).
J. A. T. Norman, et al., “Chemical Additives for Improves Copper Chemical Vapor Deposition Processing,” Thin Solid Films 262, pp. 46-51 (1995).
G. A. Petersen, et al., “Enhanced Chemical Vapor Deposition of Copper from (hfac)Cu(TMVS) Using Liquid Coinjection of TMVS,” J. Electrochem Soc., vol. 142, No. 3, pp. 939-944 (1995).
A. V. Gelatos, et al., “Chemical Vapor Deposition of Copper from Copper+1Precursors in the Presence of Water Vapor,” Appl. Phys. Lett. 63 (20), pp. 2842-2844 (1993).
S-W K., et al., “(hfac)Cu(I)(MP) (hfac=hexafluoroacetylacetonate, MP=4-methyl-I-pentene) and (hfac)(Cu(I)(DMB) (DMB=3,3-dimethyl-I-butene) for the Chemical Vapor Deposition of Copper Film,” Thin Solid Films, pp. 10-13 (1999).
E. S. Hwang, et al., “Surfactant-Catalyzed Chemical Vapor Deposition of Copper Thin Films,” Chem Mater. 12, pp. 2076-2081 (2000).
T. Nguyen, et al., “Stress and Adhesion of CVD Copper and Tin,” Mat. Res. Soc. Symp. Proc. vol. 356, pp. 859-862 (1995).
R. Kröger, et al., “Nucleation and Growth of CVD Cu Films,” Mat. Res. Soc. Symp. Proc. vol. 564, pp. 237-241 (1999).
R. Kröger, et al., “Properties of Copper Films Prepared by Chemical Vapor Deposition for Advanced Metallization of Microelectronic Devices,” Journal of the Electrochemical Society, 146 (9), pp. 3248-3254 (1999).
M. Juppo, et al., “Deposition of Copper Films by an Alternate Supply of CuCI and Zn,” J. Vac. Sci. Technol. A 15(4), pp. 2330-2333 (1997).
P. Martensson, et al., “Atomic Layer Epitaxy of Copper,” J. Electrochem. Soc., vol. 145, No. 8, pp. 2926-2931 (1998).
R. Solanki, et al., “Atomic Layer Deposition of Copper Seed Layers,” Electrochemical and Solid-State Letters, 3(10), pp. 479-480 (2000).
K. Holloway, et al., “Tantalum as a Diffusion Barrier Between Copper and Silicon: Failure Mechanism and Effect of Nitrogen Additions,” J. Appl. Phys. 71 (11), pp. 5433-5444 (1992).
M. H. Tsai, et al., “Comparison of the Diffusion Barrier Properties of Chemical-Vapor-Deposited TaN and Sputtered TaN between Cu and Si,” J. Appl. Phys. 79 (9), pp. 6932-6938 (1996).
B. Mehrotra, et al., “Properties of Direct Current Magnetron Reactively Sputtered TaN,” J. Vac. Sci. Technol. B5 (6), pp. 1736-1740 (1987).
M. J. Buiting, et al., “Kinetical Aspects of the LPCVD of Titanium Nitride from Titanium Tetrachloride and Ammonia,” J. Electrochem. Soc., vol. 138, No. 2, pp. 500-505 (1991).
B. H. Weiller, “CVD of Titanium Nitride for Electronic Applications: Gas Phase Chemical Kinetics for Fundamental Principles and Modeling,” Electrochemical Society Proceedings, vol. 96(5), pp. 231-238.
T. Q. Li, et al., “Initial Growth and Texture Formation During Reactive Magnetron Sputtering of TiN on Si(111),” J. Vac. Sci. Technol. A 20(3), pp. 583-588 (2002).
G. S. Chen, et al., “Evaluation of Radio-Frequency Sputter-Deposited Textured TiN Thin Films as Diffusion Barriers Between Copper and Silicon,” J. Vac. Sci. Technol A 20(2), pp. 479-485 (2002).
A. Bouteville, et al., “Low Temperature Rapid Thermal Low Pressure Chemical Vapor Deposition of (111) Oriented TiN Layers from the TiCI4-NH3-H2Gaseous Phase,” Microelectronic Engineering 37/38, pp. 421-425 (1997).
Marcadal, C., et al., “CVD Process for Copper Interconnection”, Microelectronic Engineering 37/38 (1997), pp. 97-103.
Joswig, H., et al., “Improved Performance of Tin-Diffusion Barriers After a Post-Treatment”, VMIC Conference, Jun. 12-13, 1990

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