Coating processes – Applying superposed diverse coating or coating a coated base – Metal coating
Reexamination Certificate
2007-12-25
2007-12-25
Chen, Bret (Department: 1762)
Coating processes
Applying superposed diverse coating or coating a coated base
Metal coating
C427S419700, C427S564000, C427S576000, C427S584000, C427S249150, C427S249170, C427S250000, C427S255394, C427S255700
Reexamination Certificate
active
10428447
ABSTRACT:
A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.
REFERENCES:
patent: 5019531 (1991-05-01), Awaya et al.
patent: 5085731 (1992-02-01), Norman et al.
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5434044 (1995-07-01), Nulman et al.
patent: 5521120 (1996-05-01), Nulman et al.
patent: 5567987 (1996-10-01), Lee
patent: 5580823 (1996-12-01), Hegde et al.
patent: 5654235 (1997-08-01), Matsumoto et al.
patent: 5665209 (1997-09-01), Byun
patent: 5776830 (1998-07-01), Sumi et al.
patent: 5776831 (1998-07-01), Padmanabhan et al.
patent: 5891513 (1999-04-01), Dubin et al.
patent: 5925225 (1999-07-01), Ngan et al.
patent: 5973402 (1999-10-01), Shinriki et al.
patent: 6114764 (2000-09-01), Hoshino et al.
patent: 6165555 (2000-12-01), Jun et al.
patent: 6303490 (2001-10-01), Jeng
patent: 6344411 (2002-02-01), Yamada et al.
patent: 6423201 (2002-07-01), Mandrekar
patent: 6475902 (2002-11-01), Hausmann et al.
patent: 6491978 (2002-12-01), Kalyanam
patent: 6509266 (2003-01-01), Ciotti et al.
patent: 6548402 (2003-04-01), Wang et al.
patent: 6562715 (2003-05-01), Chen et al.
patent: 6743473 (2004-06-01), Parkhe et al.
patent: 6869876 (2005-03-01), Norman et al.
patent: 2003/0145790 (2003-08-01), Sakamoto et al.
patent: 0 818 559 (1998-01-01), None
patent: 1 029 943 (2000-08-01), None
patent: 1 142 894 (2001-10-01), None
patent: 1 180 553 (2002-02-01), None
patent: 60258471 (1985-12-01), None
patent: 96127870 (1996-05-01), None
patent: 00219968 (2000-08-01), None
patent: WO 9900830 (1999-01-01), None
patent: WO 00/71550 (2000-11-01), None
patent: WO 0071550 (2000-11-01), None
E. T. Eisenbraun, et al., “Enhanced Growth of Device-Quality Copper by Hydrogen Plasma-Assisted Chemical Vapor Deposition,” Appl. Phys. Lett. 60 (25), pp. 3126-3128 (1992).
H. J. Jin, et al., “Plasma-Enhanced Metal Organic Chemical Vapor Deposition of High Purity Copper Thin Films Using Plasma Reactor with the H Atom Source,” J. Vac. Sci. Technol. A 17(3), pp. 726-730 (1999).
S. K. Lakshmanan, et al., “A Novel Model of Hydrogen Plasma Assisted Chemical Vapor Deposition of Copper,” Thin Solid Films 338, pp. 24-39 (1999).
J. A. T. Norman, et al., “Chemical Additives for Improves Copper Chemical Vapor Deposition Processing,” Thin Solid Films 262, pp. 46-51 (1995).
G. A. Petersen, et al., “Enhanced Chemical Vapor Deposition of Copper from (hfac)Cu(TMVS) Using Liquid Coinjection of TMVS,” J. Electrochem Soc., vol. 142, No. 3, pp. 939-944 (1995).
A. V. Gelatos, et al., “Chemical Vapor Deposition of Copper from Copper+1Precursors in the Presence of Water Vapor,” Appl. Phys. Lett. 63 (20), pp. 2842-2844 (1993).
S-W K., et al., “(hfac)Cu(l)(MP) (hfac=hexafluoroacetylacetonate, MP=4-methyl-l-pentene) and (hfac)(Cu(1)(DMB) (DMB=3,3-dimethyl-l-butene) for the Chemical Vapor Deposition of Copper Film,” Thin Solid Films, pp. 10-13 (1999).
E. S. Hwang, et al., “Surfactant-Catalyzed Chemical Vapor Deposition of Copper Thin Films,” Chem Mater. 12, pp. 2076-2081 (2000).
T. Nguyen, et al., “Stress and Adhesion of CVD Copper and Tin,” Mat. Res. Soc. Symp. Proc. vol. 356, pp. 859-862 (1995).
R. Kröger, et al., “Nucleation and Growth of CVD Cu Films,” Mat. Res. Soc. Symp. Proc. vol. 564, pp. 237-241 (1999).
R. Kröger, et al., “Properties of Copper Films Prepared by Chemical Vapor Deposition for Advanced Metallization of Microelectronic Devices,” Journal of The Electrochemical Society, 146 (9), pp. 3248-3254 (1999).
M. Juppo, et al., “Deposition of Copper Films by an Alternate Supply of CuCl and Zn,” J. Vac. Sci. Technol. A 15(4), pp. 2330-2333 (1997).
P. Martensson, et al., “Atomic Layer Epitaxy of Copper,” J. Electrochem. Soc., vol. 145, No. 8, pp. 2926-2931 (1998).
R. Solanki, et al., “Atomic Layer Deposition of Copper Seed Layers,” Electrochemical and Solid-State Letters, 3(10), pp. 479-480 (2000).
K. Holloway, et al., “Tantalum as a Diffusion Barrier Between Copper and Silicon: Failure Mechanism and Effect of Nitrogen Additions,” J. Appl. Phys. 71 (11), pp. 5433-5444 (1992).
M. H. Tsai, et al., “Comparision of the Diffusion Barrier Properties of Chemical-Vapor-Deposited TaN and Sputtered TaN between Cu and Si,” J. Appl. Phys. 79 (9), pp. 6932-6938 (1996).
B. Mehrotra, et al., “Properties of Direct Current Magnetron Reactively Sputtered TaN,” J. Vac. Sci. Technol. B5 (6), pp. 1736-1740 (1987).
M. J. Buiting, et al., “Kinetical Aspects of the LPCVD of Titanium Nitride from Titanium Tetrachloride and Ammonia,” J. Electrochem. Soc., vol. 138, No. 2, pp. 500-505 (1991).
B. H. Weiller, “CVD of Titanium Nitride for Electronic Applications: Gas Phase Chemical Kinetics for Fundamental Principles and Modeling,” Electrochemical Society Proceeedings, vol. 96(5), pp. 231-238, no date available.
T. Q. Li, et al., “Initial Growth and Texture Formation During Reactive Magnetron Sputtering of TiN on Si(111),” J. Vac. Sci. Technol. A 20(3), pp. 583-588 (2002).
G. S. Chen, et al., “Evaluation of Radio-Frequency Sputter-Deposited Textured TiN Thin Films as Diffusion Barriers Between Copper and Silicon,” J. Vac. Sci. Technol A 20(2), pp. 479-485 (2002).
A. Bouteville, et al., “Low Temperature Rapid Thermal Low Pressure Chemical Vapor Deposition of (111) Oriented TiN Layers from the TiCl4-NH3-H2Gaseous Phase,” Microelectronic Engineering 37/38, pp. 421-425 (1997).
Marcadal, C., et al., “CVD Process for Copper Interconnection”, Microelectronic Engineering 37/38 (1997), pp. 97-103.
Joswig, H., et al., “Improved Performance of Tin-Diffusion Barriers After a Post-Treatment”, VMIC Conference, Jun. 12-13, 1990, p. 477.
Wang. M. T., et al., “Barrier Properties of Very Thin Ta and TaN Layers Against Copper Diffusion”, J. Electrochem. Soc., vol. 145, No. 7, Jul. 1998, pp. 2538-2545.
Zhang, Jiming, et al., “CVD Cu Process Development and Integration for Sub-0.18 μm Devices”, Mt. Res. Soc. Symp. Proc., vol. 564, 1999, pp. 243-249.
Jain A., et al. “Process Development, Film characterization, and Integration of PECVD W2N as a Diffusion Barrier for Cooper Interconnect”, Sandhu, Gurtej S., Advanced Metallization Conference in 1998 (AMC 1998), Materials Research Society, pp. 305-311.
Li, C. Y., et al., “Influence of IMP Copper Flash Layer on the Properties of Copper Films Deposited by Metal Organic Chemical Vapor Deposition”, Part of the SPIE Conference on Multilevel Interconnect Technology III, SPIE, Sep. 1999, vol. 3883, pp. 46-49, Santa Clara, California.
Kroger, R., et al., “Properties of Copper Films Prepared by Chemical Vapor Deposition for Advanced Metallization of Microelectronic Devices”, Journal of The Electrochemical Society, 1999, 146 (9), pp. 3248-3254.
Yang, Daewon, et al., “Evolution of Surface Morphology during Cu(TMVS)(hfac) Sourced Copper CVD”, Mat. Res. Soc. Symp. Proc., 2000, vol. 612, pp.
Cheng Hansong
Garg Diwakar
Machado Eduardo
Norman John Anthony Thomas
Ordejon Pablo
Air Products and Chemicals Inc.
Chen Bret
Morris-Oskania Rosaleen P.
Rossi Joseph D.
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