Methods for decreasing surface roughness in novolak-based resist

Details Methods for decreasing surface roughness in novolak-based resist Methods for decreasing surface roughness in novolak-based resist

1998-10-06

2000-12-19

Huff, Mark F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Removal of imaged layers

430311, 430327, G03F 732

Patent

active

061625922

ABSTRACT:
Methods of fabricating microelectronic devices comprise applying compositions comprising salt additives and basic components to resists to decrease the surface roughness of the resists and form the microelectronic devices having the resists present therein.

REFERENCES:
patent: 4294911 (1981-10-01), Guild
patent: 4423138 (1983-12-01), Guild
patent: 4784937 (1988-11-01), Tanaka et al.
patent: 4833067 (1989-05-01), Tanaka et al.
patent: 5286600 (1994-02-01), Ochiai et al.
patent: 5292614 (1994-03-01), Ochiai et al.
patent: 5837425 (1998-11-01), Nakanishi
Yoshimura, Toshiyuki et al.; Nano edge toughness in polymer resist patterns, 1993 American Institute of Physics, Appl. Phys. Lett. 63(6), Aug. 9, 1993, pp. 764-766.
Yoshimura, Toshiyuki et al.; Correlation of Nano Edge Roughness in Resist Patterns With Base Polymers, Jpn. J. Appl. Phys., vol. 32 (1993), pp. 6065-6070, Part 1, No. 12B, Dec. 1993.
Reynolds, Geoffrey W. et al.; Surface and Sidewall Roughness Studies of a Chemically-Amplified Resist Exposed to X-Rays, Proceedings of the 11.sup.th International Conference on Photopolymers, 1997 (13 pp.).
Reynolds, Geoffrey et al.; Effect of Processing on Surface Roughness for a Negative-Tone, Chemically-Amplified Resist Exposed by X-ray Lithography, Proceedings SPEI 3333, 916 (1998), 8 (8 pp.).
Huang, J-P et al.; On the Dissolution of Novolak in Aqueous Alkali, Macromelecules 1989, 22, pp. 4106-4112.
Reiser, A. et al.; Novolak-Diazoquinine Resists: The Imaging Systems of the Computer Chip, Agnew Chem. Int. Ed. Engl., 1996, 35, pp. 2428-2440.
Henderson, C.L. et al.; Factors Affecting the Dissolution Rate of Novolac Resins II: Developer Composition Effects, SPIE, vol. 2724, pp. 481-490, 1996.
Arcus, R.A.; Basis for Processing Differences Between Positive Photoresist Developers: Quaternary Alkyl Ammonium Hydroxide and Alkali Metal Hydroxide, Proc. Kodak Microelectronics Seminar, Interface, pp. 25-32, San Diego, Nov. 1985.

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