Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...
Reexamination Certificate
2005-07-28
2010-12-07
Such, Matthew W (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
C438S514000, C438S530000, C438S914000, C438S920000, C257SE21135
Reexamination Certificate
active
07846822
ABSTRACT:
The present invention provides methods for fabricating semiconductor structures and devices, particularly ultra-shallow doped semiconductor structures exhibiting low electrical resistance. Methods of the present invention use modification of the composition of semiconductor surfaces to allow fabrication of a doped semiconductor structure having a selected dopant concentration depth profile, which provides useful junctions and other device components in microelectronic and nanoelectronic devices, such as transistors in high density integrated circuits. Surface modification in the present invention also allows for control of the concentration and depth profile of defects, such as interstitials and vacancies, in undersaturated semiconductor materials.
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Braatz Richard D.
Gunawan Rudiyanto
Jung Michael Yoo Lim
Seebauer Edmund G.
Greenlee Sullivan P.C.
Such Matthew W
The Board of Trustees of the University of Illinois
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